Samsung to Use TSMC 3nm Process for NVIDIA HBM Base Chips

Samsung Electronics will reportedly use TSMC's 3nm process to produce base chips for NVIDIA's next-generation custom high-bandwidth memory (HBM), marking the first collaboration between the two companies in HBM manufacturing.

According to sources, NVIDIA has asked Samsung, SK hynix, and Micron to manufacture NVHBM base chips using TSMC's process and to use sixth-generation DRAM technology for the core chips. Samsung accepted the request after an internal review, but plans to keep its in-house production model for standard HBM and products customized for other clients.

NVIDIA introduced NVHBM in August 2026, integrating its custom memory controller into the base chip to enable standardized implementation across multiple memory suppliers. Samsung previously used a turn-key model for HBM development, handling design through packaging with a single supplier, while SK hynix adopted a specialized division model by outsourcing HBM4 base chips to TSMC.

The latest development means Samsung and TSMC will jointly develop 3nm base chips, with the goal of producing standardized products and reducing NVHBM qualification steps. NVIDIA has said NVHBM offers 30% higher memory bandwidth and 15% lower power consumption than standard HBM4E. To achieve these benefits, NVIDIA is requiring standardized components, with base chips made only by TSMC's 3nm process and core chips using sixth-generation DRAM, avoiding separate validation of each vendor's samples.

Meanwhile, Samsung is open to temporary cooperation with TSMC due to demand from NVHBM, while continuing to handle standard HBM and custom chips for other clients, and is exploring the possibility of backup capacity for NVHBM base chips.