Micron outlines vHBM and vEIM 3D memory plans for 2028

At its 2026 Technology Symposium held on October 21, 2026, Micron shared its outlook for DRAM, broad HBM, NAND and SSD technologies. The company said it expects two new 3DS memory types, vHBM and vEIM, to arrive in 2028 alongside standard HBM5.

vHBM is a 3D-integrated version of HBM that vertically stacks DRAM dies, a base die and an XPU logic chip to shorten data paths, improve bandwidth efficiency and reduce power consumption. It is designed to coexist with standard 2.5D HBM. vEIM has a similar structure but targets on-device AI inference, with first-generation goals of 2TB/s bandwidth and less than 1pJ/bit energy efficiency.

To realize vHBM and vEIM, Micron plans to use bumpless hybrid bonding technology and integrated thermal solutions.